| PART |
Description |
Maker |
| NDL7564P NDL7103 NDL7113 NDL7153 NDL7163 NDL7502P |
Low Power 5V RS232 Dual Driver/Receiver with 0.1?碌F Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?掳C to 85?掳C
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION InGaAsP的应变量子阱的DC -异质结脉冲激光二极管模块1310 OTDR的应
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NDL7540PA NX8561JD NX7460LE NX7460LE-BA NX7460LE-C |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 1 480纳米掺铒光纤放大器的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 掺铒光纤放大 480纳米的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| KLT-155452 |
1550nm InGaAsP strained MQW for FP-LD 2mm ball lens TO CAN
|
KODENSHI KOREA CORP.
|
| NDL7701P00 NDL7701P1 NDL7701P1C NDL7701P1D NDL7701 |
1550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW-DFB DC-PBH LASER DIODE MODULE
|
NEC
|
| NX5322EH NX5322EK NX5322 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
|
NEC
|
| NX5322EH-AZ NX5322EK-AZ |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NDL7910P NX8501BG-CA NX8501BG-BA NX8501 NX8501CC N |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 1 510纳米光纤通信InGaAsP的应变量子阱的DC -异质结激光二极管模块
|
NEC, Corp.
NEC Corp.
http://
|
| NX6314EH |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
California Eastern Labs
|
| NX7337BF-AA NX7337BF-AA-AZ |
1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
CEL[California Eastern Labs]
|
| NX7339BB-AA |
1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
http://
|
| NX7337BF-AA |
1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Laboratories
|
